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FMV30N60S1 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Fuji Electric

Overview: FMV30N60S1 Super J-MOS series http://.fujielectric./products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power.

General Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Isolation Voltage Viso Note *1 : Limited by maximum channel temperature.

Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current.

Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.

Key Features

  • Pb-free lead terminal RoHS compliant.

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