Datasheet4U Logo Datasheet4U.com

FMV30N60S1 - N-Channel enhancement mode power MOSFET

Description

Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR E

Features

  • Pb-free lead terminal RoHS compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FMV-3FU Damper Diode Sanken electric
FMV-3GU Damper Diode Sanken electric
FMV-G5FS Damper Diodes Sanken electric
FMV09N70E N-Channel MOSFET INCHANGE
FMV11N60E N-Channel MOSFET INCHANGE

Other Datasheets by Fuji Electric

Part Number Description
FMV03N60E N-CHANNEL SILICON POWER MOSFET
FMV05N50E N-CHANNEL SILICON POWER MOSFET
FMV05N60E N-CHANNEL SILICON POWER MOSFET
FMV06N60E N-CHANNEL SILICON POWER MOSFET
FMV06N60ES N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

Click to expand full text
FMV30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-220F(SLS) Equivalent circuit schematic â‘¡Drain Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS.
Published: |