• Part: FMV60N088S2HF
  • Description: N-Channel enhancement mode power MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 863.17 KB
Download FMV60N088S2HF Datasheet PDF
Fuji Electric
FMV60N088S2HF
FMV60N088S2HF is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features Pb-free lead terminal Ro HS pliant uses Halogen-free molding pound Applications For switching Outline Drawings [mm] TO-220F(SLS) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Continuous Diode Forward Current Pulsed Diode Forward Current Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt IDP VGS IAS EAS d VDS/dt ISD ISDP d V/dt -di/dt Maximum Power Dissipation Tch Operating and Storage Temperature range Tstg Isolation Voltage (TO-220F) Viso Note - 1 : Maximum duty cycle D=0.60 Note - 1 : Limited by maximum channel temperature. Note - 2 : Tch≤150°C, See Fig.1 and Fig.2 Note - 3 : S‌ tarting Tch=25°C, IAS=3A, L=207m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note - 4 : ISD≤32.8A, -di/dt≤100A/μs, VDS peak≤ 600V, Tch≤150°C. Note - 5 : ISD≤32.8A, d V/dt≤15V/ns, VDS peak≤ 600V, Tch≤150°C. Characteristics 600 600 42.3 26.8 131 ±30 50 42.3 26.8 131 15 100 2.16 85 150 -55 to...