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FMW20N60S1HF - N-CHANNEL SILICON POWER MOSFET

General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating a

Key Features

  • Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-247-P2 Equivalent circuit schematic.

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www.DataSheet.co.kr http://www.fujielectric.com/products/semiconductor/ FMW20N60S1HF Super J-MOS series Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) FUJI POWER MOSFET N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-247-P2 Equivalent circuit schematic Applications UPS Server Telecom Power conditioner system Power supply Gate(G) Drain(D) Source(S) CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS.