Datasheet4U Logo Datasheet4U.com

K2003 - 2SK2003-01MR

Key Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www. DataSheet4U. com VGS=±30V Guarantee Avalanche-proof FUJI POWER MOSFET FAP-IIA SERIES Outline Drawings TO-220F15.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K2000EH70 High Energy Bidirectional SIDACs Littelfuse
K2000G Sidac JIEJIE
K2000G Axial Leaded Silicon Bilateral Voltage Triggered Diode Sunmate
K2000GH High Energy Bidirectional SIDACs Littelfuse
K2000GHU High Energy Unidirectional SIDACs Littelfuse

Other Datasheets by Fuji Electric

Part Number Description
K2000-R 2SK2000-R
K2004-01L 2SK2004-01L
K2025-01 N-channel MOS-FET
K2027 N-channel MOS-FET
K2049 2SK2049

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2003-01MR N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www.DataSheet4U.com VGS=±30V Guarantee Avalanche-proof FUJI POWER MOSFET FAP-IIA SERIES Outline Drawings TO-220F15 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 2.54 3. Source JEDEC EIAJ SC-67 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max.