Datasheet4U Logo Datasheet4U.com

K2050 - 2SK2050

Key Features

  • - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance N-channel MOS-FET 100V 0,055Ω 30A 80W > Outline Drawing >.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K2057 2SK2057 Toshiba Semiconductor
K2000EH70 High Energy Bidirectional SIDACs Littelfuse
K2000G Sidac JIEJIE
K2000G Axial Leaded Silicon Bilateral Voltage Triggered Diode Sunmate
K2000GH High Energy Bidirectional SIDACs Littelfuse

Other Datasheets by Fuji Electric

Part Number Description
K2000-R 2SK2000-R
K2003 2SK2003-01MR
K2004-01L 2SK2004-01L
K2025-01 N-channel MOS-FET
K2027 N-channel MOS-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2050 F-III Series > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance N-channel MOS-FET 100V 0,055Ω 30A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current V DS V DGR ID 100 100 30 Pulsed Drain Current I D(puls) 120 Gate-Source-Voltage V GS ±20 Max.