High speed switching Low on-resistance www. datasheet4u. com No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54.
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2SK2642-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance www.datasheet4u.com No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
3. Source
Equivalent circuit schematic
Drain(D)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.7 50 +150 -55 to +150 Unit V A A V mJ W °C °C
Gate(G) Source(S)
*1 L=0.
K2642-01MR Datasheet
