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K3686-01 - 2SK3686-01

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 Super FAP-G Series N-.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3686-01 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 600 V 600 A Continuous drain current ±16 A Pulsed drain current ±64 V Gate-source voltage ±30 A Repetitive or non-repetitive 16 mJ Maximum avalanche energy 242.7 kV/μ s Maximum drain-source dV/dt 20 kV/μ s Peak diode recovery dV/dt 5 Max. power dissipation 2.02 W 270 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.