MS808C06 - Schottky Barrier Diode

Datasheet Summary

Features

Low VF Super high speed switching High reliability by planer design 2.8±0.2 (4.0) (0.8) (3.2) Connection diagram.

Fuji Electric

📥 Download Datasheet

Datasheet Details

Part number	MS808C06
Manufacturer	Fuji Electric
File Size	77.26 KB
Description	Schottky Barrier Diode
Datasheet	MS808C06 Datasheet
Additional preview pages of the MS808C06 datasheet.

📁 Similar Datasheet

MS80 - Surface Mount Si-Bridge-Rectifiers (Diotec Semiconductor)
MS8000 - Single axis analog accelerometer (SAFRAN)
MS8001 - GaAs Schottky Diodes (Microsemi)
MS8002 - GaAs Schottky Diodes (Microsemi)
MS8003 - GaAs Schottky Diodes (Microsemi)
MS8004 - GaAs Schottky Diodes (Microsemi)
MS8051 - CMOS Operational Amplifier (Ruimeng)
MS8052 - CMOS Operational Amplifier (Ruimeng)
MS8054 - CMOS Operational Amplifier (Ruimeng)
MS809 - Schottky Diodes (Infineon Technologies)

Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com MS808C06 (30A) SCHOTTKY BARRIER DIODE 9.0±0.2 7.0±0.2 4 0.6±0.2 0.1 (60V / 30A ) Outline drawings, mm 10.1±0.3 9.0±0.2 Solder Plating 2.0 1.5 2.0 2.5 0.5±0.2 (5.8) 1 1.0±0.2 1.0±0.2 2 3 0.4±0.1 3.6±0.2 Features Low VF Super high speed switching High reliability by planer design 2.8±0.2 (4.0) (0.8) (3.

Published: Nov 6, 2007 |