MS808C06
MS808C06 is Schottky Barrier Diode manufactured by Fuji Electric.
Features
Low VF Super high speed switching High reliability by planer design
2.8±0.2
(4.0) (0.8)
(3.2)
Connection diagram
Applications
High speed power switching
1 2 4 3
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Sine wave 10ms Conditions Rating 60 60 30- 200 -40 to +150 -40 to +150 Unit V V A A °C °C
- Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=12.5A VR=VRRM Junction to case Max. 0.58 20 1.2 Unit V m A °C/W
(2.2) (2.1)
(10.1)
..
(60V / 30A )
Characteristics
Forward Characteristic
TS808C06 (30A)
(typ.)
Reverse Characteristic (typ.)
Tj=150 C 10
2 o
Tj=125 C
1 o
(m A)
Tj=100 C o
Tj=125
1 o
Reverse Current
Tj=150...
