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YG971S8R - Low-Loss Fast Recovery Diode

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YG971S8R Low-Loss Fast Recovery Diode http://www.fujisemi.com FUJI Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average forward current IFAV Non-repetitive forward surge current Operating junction temperature Storage temperature IFSM Tj Tstg Conditions - Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 93˚C Sine wave, 10ms 1shot - - Ratings 800 1500 5 60 150 -40 to +150 Units V V A A ˚C ˚C Electrical characteristics Item Forward voltage Reverse current Reverse recovery time Thermal resistance (at Ta=25˚C unless otherwise specified.) Symbols Conditions VF IF =5 A IR VR =VRRM trr IF =0.1A, IR =0.2A, Irec =0.