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2SK2642-01MR - N-Channel Silicon Power MOSFET

Key Features

  • t e High speed switching e h Low on-resistance S No secondary breakdown apower t Low driving a High D voltage . V =±35V Guarantee w Avalanche-proof w w GS 2SK2642-01MR m FUJI POWER MOS-FET N-.

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o c . U 4 Features t e High speed switching e h Low on-resistance S No secondary breakdown apower t Low driving a High D voltage . V =±35V Guarantee w Avalanche-proof w w GS 2SK2642-01MR m FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.