Datasheet4U Logo Datasheet4U.com

2SK3699-01MR - N-Channel Silicon Power MOSFET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3699-01MR N-Channel MOSFET Transistor Inchange Semiconductor
2SK369 N-Channel MOSFET Toshiba Semiconductor
2SK3690-01 N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK3692-01 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Fuji Electric

Part Number Description
2SK3102-01R MOSFET / Power MOSFETs
2SK3518-01MR N-Channel Silicon Power MOSFET
2SK3579-01MR Power MOSFET
2SK3728-01MR Power MOSFET
2SK3889-01L Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol Ratings V DS 900 VDSX *5 900 ±3.7 ID ID(puls] ±14.8 VGS ±30 IAR *2 3.7 EAS *1 171.