K3518 Datasheet | Fuji Electric

Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w w Applications regulators w Switching UPS (Uninterruptible Power Supply) DC-DC converters (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C 2SK3518-01MR m FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Maximum ratings and characteristic Absolute maximum ratings Ratings 500 ±6 ±24 ±30 6 115 20 5 2.16 32 Operating and storage Tch +150 -55 to +150 temperature range Tstg Isolation Voltage VISO - 5 2 - 1 L=5.90m H, Vcc=50V, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Unit V A A V A m J k V/µs k V/µs W Electrical characteristics (Tc =25°C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=500V VGS=0V Tch=125°C VDS=400V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V RGS=10 Ω V CC=250V ID=6A VGS=10V L=5.9m H Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton w w w t a .D IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr - 4 VDS < = 500V S a e h U 4 t e .c m o Drain(D) Source(S) Equivalent circuit schematic Gate(G) °C °C k Vrms - 5 t=60sec, f=60Hz Min. 500 3.0 Typ. Max. 5.0 25 250 100 1.50 675 90 4.5 15 7.5 30 7.5 22.5 10.5 4.5 Units V V µA...