Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
KEC
Other Datasheets by Fuji Electric
Part Number
Description
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
co Super FAP-G .Series U 4 t Features e High speed switching e h Low on-resistance Sbreadown No secondary a t power Low driving a Avalanche-proof .D w wApplications regulators w Switching UPS (Uninterruptible Power Supply)
DC-DC converters
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C
2SK3518-01MR m
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
Ratings 500 ±6 ±24 ±30 6 115 20 5 2.
K3518 Datasheet
