2MBI100P-140
2MBI100P-140 is IGBT manufactured by Fuji Electric.
Features
- Square SC SOA at 10 x IC
- Simplified Parallel Connection
- Narrow Distribution of Characteristics
- High Short Circuit Withstand-Capability
2-Pack IGBT 1400V 100A n Outline Drawing n Applications
- High Power Switching
- A.C. Motor Controls
- D.C. Motor Controls
- Uninterruptible Power Supply n Maximum Ratings and Characteristics
- Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25°C) Symbols VCES VGES Continuous TC=25°C IC Continuous TC=80°C 1ms TC=25°C IC PULSE 1ms TC=80°C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting
- 1 Terminals
- 2 Ratings 1400 ± 20 150 100 300 200 100 200 780 +150 -40 ∼ +125 2500 3.5 3.5 Units V V n Equivalent Circuit
Collector Current
Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque
W °C °C V Nm
Note:
- 1:Remendable Value; 2.5 ∼ 3.5 Nm (M5)
- Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres t ON tr t OFF tf VF trr Test Conditions VGE=0V VCE=1400V VCE=0V VGE=± 20V VGE=20V IC=100m A Tj= 25°C VGE=15V IC=100A Tj=125°C VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=± 15V RG=9.1Ω IF=100A VGE=0V IF=100A Min. Typ. Max. 2.0 400 9.0 3.0 Units m A µA V V p F 1.2 0.6 1.0 0.3 3.3 350
8.0 2.7 3.3 10000 1500 650
µs V ns
- Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal pound Min. Typ. Max. 0.16 0.33 Units °C/W
2MBI 100P-140
Collector Current vs. Collector-Emitter Voltage 250 T j= 2 5 ° C 250 T j= 1 2 5 ° C V G E= 2 0 V 1 5 V
2-Pack IGBT 1400V 100A
Collector Current vs. Collector-Emitter Voltage
[A]
[A]
V GE= 2...