2MBI100S-120
2MBI100S-120 is IGBT Module manufactured by Fuji Electric.
Features
- NPT-Technology
- Square SC SOA at 10 x IC
- High Short Circuit Withstand-Capability
- Small Temperature Dependence of the Turn-Off Switching Loss
- Low Losses And Soft Switching
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2-Pack IGBT 1200V 2x100A
- Outline Drawing
- Applications
- High Power Switching
- A.C. Motor Controls
- D.C. Motor Controls
- Uninterruptible Power Supply
- Maximum Ratings and Characteristics
- Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Continuous Collector 1ms Current Continuous 1ms Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VCES VGES 25°C / 80°C IC 25°C / 80°C IC PULSE -IC -IC PULSE PC Tj Tstg Vis Mounting 1- Terminals 2- ( at Tj=25°C ) Symbols Ratings 1200 ± 20 150 / 100 300 / 200 100 200 780 +150 -40 ∼ +125 2500 3.5 4.5 Units V
- Equivalent Circuit
A W °C V Nm
Note: 1- : Remendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) 2- : Remendable Value; 3.5 ∼ 4.5 Nm (M6)
- Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time
ICES IGES VGE(th) VCE(sat) Cies Coes Cres t ON tr,x tr,i t OFF tf VF trr
Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=100m A Tj = 25°C VGE=15V IC=100A Tj =125°C VGE=0V VCE=10V f=1MHz VCC = 600V IC = 100A VGE = ±15V RG = 9.1Ω Inductive Load IF=100A IF=100A Tj = 25°C Tj =125°C
Min.
Typ.
7.2 2.3 2.8 12000 2500 2200 0.35 0.25 0.10 0.45 0.08 2.3 2.0
Max. 2.0 400 8.5 2.6
Units m A n A V p F 1.2 0.6 1.0 0.3 3.0 350 µs
V ns
- Thermal Characteristics
Items Thermal Resistance Symbols
Rth(j-c) Rth(j-c) Rth(c-f)
Test Conditions IGBT Diode With Thermal pound
Min.
Typ.
Max. 0.16 0.33
Units...