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2SK1389 Datasheet PDF

Fuji Electric 2SK1389

Silicon N-Channel MOSFET

Part No. 2SK1389
Datasheet 2SK1389 Download
Manufacturer
Fuji Electric
Description Silicon N-Channel MOSFET
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2SK1389 datasheet page 1 preview

FEATURES

High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,025Ω 50A 125W > Outline Drawing >

APPLICATIONS

- Motor Control - General Purpose Power Amplifier - DC-DC converters >

MAXIMUM RATINGS

and Characteristics -

ABSOLUTE MAXIMUM RATINGS

(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 60 50 200 50 ±20 125 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Circuit -

ELECTRICAL CHARACTERISTICS

(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time...
2SK1389 page 2 preview