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2SK1917-MR Datasheet PDF

Fuji Electric 2SK1917-MR

N-CHANNEL SILICON POWER MOSFET

Part No. 2SK1917-MR
Datasheet 2SK1917-MR Download
Manufacturer
Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
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2SK1917-MR datasheet page 1 preview

FEATURES

High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee

APPLICATIONS

Switching regulators UPS DC-DC converters General purpose power amplifier Outline Drawings TO-220F15 2.54 JEDEC EIAJ 3. Source SC-67 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) Item Symbol Rating Unit Drain-source voltage VDS 250 V Continuous drain current ID 10 A Pulsed drain current ID(puls] 28 A Continuous reverse drain current IDR 10 A Gate-source peak voltage VGS ±30 V Max. power dissipation PD 50 W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C Equivalent circuit schematic Gate(G) Drain(D) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacita...
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