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2SK1981-01 Datasheet PDF

Fuji Electric 2SK1981-01

N-channel MOS-FET

Part No. 2SK1981-01
Datasheet 2SK1981-01 Download
Manufacturer
Fuji Electric
Description N-channel MOS-FET
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2SK1981-01 datasheet page 1 preview

FEATURES

High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,76Ω 10A 80W > Outline Drawing >

APPLICATIONS

Switching Regulators UPS DC-DC converters General Purpose Power Amplifier >

MAXIMUM RATINGS

and Characteristics -

ABSOLUTE MAXIMUM RATINGS

(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 10 40 ±30 80 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit -

ELECTRICAL CHARACTERISTICS

(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Tr...
2SK1981-01 page 2 preview