Fuji Electric 2SK2019-01
N-channel MOS-FET
| Part No. | 2SK2019-01 |
|---|---|
| Datasheet | 2SK2019-01 Download |
| Manufacturer |  Fuji Electric |
| Description | N-channel MOS-FET |
| Buy | Stock & Price |
FEATURES
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 3Ω 3,5A 40W > Outline Drawing >APPLICATIONS
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier >MAXIMUM RATINGS
and Characteristics -ABSOLUTE MAXIMUM RATINGS
(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 3,5 14 ±30 40 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit -ELECTRICAL CHARACTERISTICS
(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Tra...