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2SK2098-01MR Datasheet PDF

Fuji Electric 2SK2098-01MR

N-channel MOS-FET

Part No. 2SK2098-01MR
Datasheet 2SK2098-01MR Download
Manufacturer
Fuji Electric
Description N-channel MOS-FET
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2SK2098-01MR datasheet page 1 preview

FEATURES

High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof N-channel MOS-FET 150V 0,08Ω 20A 50W > Outline Drawing >

APPLICATIONS

- Motor Control - General Purpose Power Amplifier - DC-DC converters >

MAXIMUM RATINGS

and Characteristics -

ABSOLUTE MAXIMUM RATINGS

(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 150 150 20 80 ±20 50 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit -

ELECTRICAL CHARACTERISTICS

(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance...
2SK2098-01MR page 2 preview