Fuji Electric 2SK2516-01L
N-channel MOS-FET
FEATURES
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 13mΩ 50A 80W > Outline Drawing >APPLICATIONS
- Motor Control - General Purpose Power Amplifier - DC-DC converters >MAXIMUM RATINGS
and Characteristics -ABSOLUTE MAXIMUM RATINGS
(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 50 200 ±16 80 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit -ELECTRICAL CHARACTERISTICS
(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (...