Fuji Electric 2SK2687-01
N-Channel Silicon Power MOSFET
FEATURES
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proofAPPLICATIONS
Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-220AB Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 30 Unit V Remarks ±50 A ±200 A ±16 V 520 mJ *1 60 W +150 °C -55 to +150 °C *1 L=0.277mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Rever...