Fuji Electric 2SK2691-01R
N-channel MOS-FET
| Part No. | 2SK2691-01R |
|---|---|
| Datasheet | 2SK2691-01R Download |
| Manufacturer |  Fuji Electric |
| Description | N-channel MOS-FET |
| Buy | Stock & Price |
FEATURES
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proofAPPLICATIONS
Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-3PF Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 Unit V Remarks ±70 A ±280 A ±20 V 685 mJ *1 100 W +150 -55 to +150 °C °C *1 L=0.186mH, Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Revers...
