Fuji Electric 2SK2896-01S
N-channel MOS-FET
| Part No. | 2SK2896-01S |
|---|---|
| Datasheet | 2SK2896-01S Download |
| Manufacturer |  Fuji Electric |
| Description | N-channel MOS-FET |
| Buy | Stock & Price |
FEATURES
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated 60V N-channel MOS-FET 12mΩ ±45A 60W > Outline Drawing >APPLICATIONS
- Motor Control - General Purpose Power Amplifier - DC-DC converters >MAXIMUM RATINGS
and Characteristics -ABSOLUTE MAXIMUM RATINGS
(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±45 ±180 ±20 461.9 60 150 -55 ~ +150 L=0.304mH,Vcc=24V Unit V A A V mJ* W °C °C -ELECTRICAL CHARACTERISTICS
(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr)...
