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2SK2898-01 Datasheet PDF

Fuji Electric 2SK2898-01

N-channel MOS-FET

Part No. 2SK2898-01
Datasheet 2SK2898-01 Download
Manufacturer
Fuji Electric
Description N-channel MOS-FET
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2SK2898-01 datasheet page 1 preview

FEATURES

High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,0065Ω ±100A 150W > Outline Drawing >

APPLICATIONS

- Motor Control - General Purpose Power Amplifier - DC-DC converters >

MAXIMUM RATINGS

and Characteristics -

ABSOLUTE MAXIMUM RATINGS

(TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±100 ±400 ±20 1268.3 150 150 -55 ~ +150 L=0.169mH,Vcc=24V Unit V A A V mJ* W °C °C -

ELECTRICAL CHARACTERISTICS

(TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(...
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