2SK3217-01MR - N-CHANNEL SILICON POWER MOS-FET

Fuji Electric

Key Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof TO-220F15.

2SK3217-01MR n-channel silicon power mos-fet by Fuji Electric - Datasheet Preview

Datasheet Details

Part number	2SK3217-01MR
Manufacturer	Fuji Electric
File Size	141.07 KB
Description	N-CHANNEL SILICON POWER MOS-FET
Datasheet	2SK3217-01MR Datasheet

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2SK3217-01MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Ta=25°C Tc=25°C Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD PD Tch Tstg Rating 100 ±50 ±200 ±30 464 2.