2SK3597-01 - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

Download the 2SK3597-01 datasheet PDF. This datasheet also covers the 2SK3597 variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

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2SK3597-01 n-channel silicon power mosfet by Fuji Electric - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SK3597_FujiElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SK3597-01
Manufacturer	Fuji Electric
File Size	111.10 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	2SK3597-01 Datasheet

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Other Datasheets by Fuji Electric

Part Number	Description
2SK3599-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3508-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3517-01	N-CHANNEL SILICON POWER MOSFET
2SK3520-01MR	N-CHANNEL SILICON POWER MOSFET
2SK3528-01R	N-Channel Silicon Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK3597-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICOFNUJI POWERPOWER MOS FET MOSFET OOUuT VItEWline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof MARKING Fig.1 Fig.1 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. Item Symbol Ratings Unit Drain-source voltage VDS 200 V Continuous drain current VDSX *5 ID Tc=25°C Ta=25°C 170 ±30 ±4.