Fuji Electric 2SK3725-01
N-CHANNEL SILICON POWER MOSFET
FEATURES
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proofAPPLICATIONS
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 200305 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS Ratings 450 Unit V Continuous drain current ID ±3 A Pulsed drain current ID(puls] ±12 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 3 A Maximum Avalanche Energy EAS *1 92.8 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt Max. power dissipation dV/dt *3 PD Ta=25°C Tc=25°C 5 2.02 50 kV/µs W Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C *1 L=18.9mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch =<150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 450V Equivalent circuit schematic Drain(D) Gate(G) Source(...