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2SK3876-01R - N-CHANNEL SILICON POWER MOSFET

Key Features

  • High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown.

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Full PDF Text Transcription for 2SK3876-01R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3876-01R. For precise diagrams, and layout, please refer to the original PDF.

2SK3876-01R N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200407 Features High speed switching, Low on-resistance Low driving ...

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) 200407 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 900 V Continuous Drain Current VDSX ID 900 V VGS=-30V 13 A Equivalent circuit schematic Pulsed Drain Current Gate-Source Voltage ID(puls] VGS ±52 A ±30 V Drain(D) Non-Repetitive Note *1 Maximum Avalanche current IAS 13 A Repetitive Maximum Avalanche current IAR 6.

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