6MBP20RUA060 Datasheet | Fuji Electric

U-series of IGBT-IPMs (600 V) Kiyoshi Sekigawa Hiroshi Endo Hiroki Wakimoto 1. Introduction Intelligent power modules (IPMs) are intelligent power devices that incorporate drive circuits, protection circuits or other functionality into a modular configuration. IPMs are widely used in motor driving (general purpose inverter, servo, air conditioning, elevator, etc.) and power supply (UPS, PV, etc.) applications. The equipment that uses these IPMs are required to have small size, high efficiency, low noise, long service life and high reliability. In response to these requirements, in 1997, Fuji Electric developed the industry’s first internal overheat protection function for insulated gate bipolar transistors (IGBTs) and developed an R-IPM series that achieved high reliability by employing an allsilicon construction that enabled a reduction in the number of ponents used. Then in 2002, Fuji Electric changed the structure of its IGBT chips from the punch through (PT) structure, which had been in use previously, to a non-punch through (NPT) structure, for which lifetime control is unnecessary, in order to realize lower turn-off loss at high temperature, and also established finer planar gate and thin wafer processing technology to develop an RIPM3 series that realizes low conduction loss. With the goal of reducing loss even further, Fuji Electric has developed an IGBT device that employs a trench NPT structure to realize lower conduction loss and has developed a new free wheeling diode (FWD) structure to improve the tradeoff between switching noise and loss. Both of these technologies are incorporated into Fuji Electric’s newly developed U-series IGBT-IPM (U-IPM) which is introduced below. 2. U-IPM Development Concepts and Product Line-up The concepts behind the development of the U-IPM are listed below. (1) Realization of lower loss Lower loss can be realized by developing new power elements and optimizing the drive performance. Increasing the carrier frequency of...