Fuji Electric 7MBP100RUA060
The equipment that uses these IPMs are required to have small size, high efficiency, low noise, long service life and high reliability. With the goal of reducing loss even further, Fuji Electric has developed an IGBT device that employs a trench NPT structure to realize lower conduction loss and has developed a new free wheeling diode (FWD) structure to improve the tradeoff between switching noise and loss.U-series of IGBT-IPMs (600 V) Kiyoshi Sekigawa Hiroshi Endo Hiroki Wakimoto 1. Introduction Intelligent power modules (IPMs) are intelligent power devices that incorporate drive circuits, protection circuits or other functionality into a modular configuration. IPMs are widely used in motor driving (general purpose inverter, servo, air conditioning, elevator, etc.) and power supply (UPS, PV, etc.) applications. In response to these requirements, in 1997, Fuji Electric developed the industry’s first internal overheat protection function for insulated gate bipolar transistors (IGBTs) and developed an R-IPM series that achieved high reliability by employing an allsilicon construction that enabled a reduction in the number of components used. Then in 2002, Fuji Electric changed the structure of its IGBT chips from the punch through (PT) structure, which had been in use previously, to a non-punch through (NPT) structure, for which lifetime control is unnecessary, in order to realize lower tu...