Fuji Electric FGW35N60HD
Discrete IGBT
FEATURES
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)APPLICATIONS
Uninterruptible power supply Power coditionner Power factor correction circuitMAXIMUM RATINGS
and CharacteristicsABSOLUTE MAXIMUM RATINGS
(at TC=25°C unless otherwise specified) Equivalent circuit Items Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Short Circuit Withstand Time IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature Symbols VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP tSC PD_IGBT PD_FWD Tj Tstg Characteristics 600 ±20 64 35 105 105 30 15 105 5 230 80 -40 ~ +175 -55 ~ +175 Units Remarks V V A TC=25°C,Tj=150°C A TC=100°C,Tj=150°C A Note *1 A VCE≤600V,Tj≤175°C A A A Note *1 µs VCC≤300V,VGE=12V Tj≤150°C W TC=25°C TC=25°C °C °C Gate Collector Emitter Note *1 : Pulse width limited by Tjmax.