Fuji Electric MS808C06
Schottky Barrier Diode
| Part No. | MS808C06 |
|---|---|
| Datasheet | MS808C06 Download |
| Manufacturer |  Fuji Electric |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
Low VF Super high speed switching High reliability by planer design 2.8±0.2 (4.0) (0.8) (3.2) Connection diagramAPPLICATIONS
High speed power switching 1 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Sine wave 10ms Conditions Rating 60 60 30* 200 -40 to +150 -40 to +150 Unit V V A A °C °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=12.5A VR=VRRM Junction to case Max. 0.58 20 1.2 Unit V mA °C/W (2.2) (2.1) (10.1) (60V / 30A ) Characteristics Forward Characteristic 100 TS808C06 (30A) (typ.) Reverse Characteristic (typ.) Tj=150 C 10 2 o Tj...
