P08N50E Datasheet PDF

FEATURES

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Equivalent circuit schematic Drain(D)

APPLICATIONS

Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S)

MAXIMUM RATINGS

and Characteristics

ABSOLUTE MAXIMUM RATINGS

at Tc=25°C (unless otherwise specified)

DESCRIPTION

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg...