Fuji Electric PH975C6
SILICON DIODE
| Part No. | PH975C6 |
|---|---|
| Datasheet | PH975C6 Download |
| Manufacturer |  Fuji Electric |
| Description | SILICON DIODE |
| Buy | Stock & Price |
MAXIMUM RATINGS
(at Tc=25℃ unless otherwise specified.) ITEM SYMBOL CONDITIONS Repetitive peak reverse voltage VRRM 50Hz Square wave duty 1/2 Average output current Io Tc=97℃ Non-repetitive surge current ** IFSM Sine wave, 10ms 1shot Operating junction temperature Tj Storage temperature * ** RATINGS 600 20 * 100 150 -40～+150 UNITS V A A ℃ ℃ Tstg Out put current of center tap full wave connection. Rating per element 5.2ELECTRICAL CHARACTERISTICS
(at Tc=25℃ unless otherwise specified.) ITEM SYMBOL CONDITIONS MAXIMUM Forward voltage *** VF IF= 10A 1.55 Reverse current *** IR VR=VRRM 10.0 Reverse recovery time *** trr IF=0.1A,IR=0.2A,Irec=0.05A 50.0 Thermal resistance Rth(j-c) Junction to case 1.5 *** Rating per element 5.3 MECHANICAL CHARACTERISTICS Mounting torque Recommended torque 0.4～0.6 Approximate mass 4.9 DWG.NO. UNITS V μ A ns ℃/W N●m g Fuji Electric Device Technology Co.,Ltd. MS5D2078 3/12 H04-004-03a 6. TEST AND INSPECTION 6.1 STANDARD TEST CONDITION Standard test condition is Ta=25℃、RH=65%.
