TP858C12R Datasheet PDF

TP858C12R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Repetitive peak reverse voltage Average output current Non-repetitive forward surge current** Operating junction temperature Storage temperature Note* Out put current of center tap full wave connection. Note** Rating per element FUJI Diode Symbols VRRM Io IFSM Tj Tstg Conditions 50Hz square wave duty =1/2 Tc =106˚C Sine wave, 10ms 1shot - Ratings 120 30* 110 150 -40 to +150 Units V A A ˚C ˚C Electrical characteristics Item Forward voltage*** Reverse current*** Thermal resistance Note*** Rating per element (at Ta=25˚C unless otherwise specified.) Symbols VF IR Rth(j-c) IF = 15 A VR =VRRM Junction to case Conditions Maximum 1.01 200 1.25 Units V µA ˚C/W Mechanical characteristics Item Approximate mass Conditions Maximum 1.6 Units g 1 Free Datasheet TP858C12R Outline Drawings [mm] FUJI Diode 2 TP858C12R FUJI Diode Forward Characteristic (typ.) 105 Reverse Characteristic (typ.) Tj=150℃ 104 10 Tj=125℃ Tj=100℃ Forward Current （Ａ） Tj=125℃ Tj=100℃ 1 Tj=25℃ Reverse Current （uA） Tj=150℃ 103 102 ＩＦ Tj= 25℃ ＩR 0.1 0.