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YG811S04R Datasheet PDF

Fuji Electric YG811S04R

Silicon Diode

Part No. YG811S04R
Datasheet YG811S04R Download
Manufacturer
Fuji Electric
Description Silicon Diode
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YG811S04R datasheet page 1 preview

FEATURES

Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4

APPLICATIONS

High speed power switching. JEDEC EIAJ SC-67 Connection Diagram 1 3

MAXIMUM RATINGS

and Characteristics

ABSOLUTE MAXIMUM RATINGS

Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions Rating 40 Unit V V V A A °C °C tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=122°C Square wave Sine wave 10ms 48 1500 5 120 -40 to +150 -40 to +150

ELECTRICAL CHARACTERISTICS

(Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=5.0A VR=VRRM Junction to case Max. 0.55 5.0 5.0 Unit V mA °C/W Mechanical Characteristics Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N●m g (40V / 5A TO-22OF15) Characteristics F...
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