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YG875C20R - Diode

Key Features

  • Ultra Low IR.
  • Low VF.
  • Tj MAX = 175˚C.
  • High reliability at higher temperatures.

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Full PDF Text Transcription for YG875C20R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for YG875C20R. For precise diagrams, and layout, please refer to the original PDF.

YG875C20R (200V, 20A) Ultra Low IR Schottky Barrier Diode http://www.fujisemi.com FUJI Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at highe...

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s • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Applications • High frequency operation • DC-DC converters • AC adapter Outline Drawings [mm] TO-220F YG875C20 YG875C20 Connection diagram Note:1 Country of origin mark. "P" is Made in PHILIPPINES. Maximum Ratings and Characteristics Maximum ratings (at Ta=25˚C Unless otherwise specified) Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current IO Non-repetitive surge current ** IFSM Operating junction temperature Tj Storage temperature Tstg *Out put current of center tap full wave connection.

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