1MBI200NK-060 Datasheet | Fuji Electric

Features - Square RBSOA - Low Saturation Voltage - Overcurrent Limiting Function (~3 Times Rated Current) n Maximum Ratings and Characteristics - Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting - 1 Terminals - 1 Ratings 600 ± 20 200 400 200 400 780 +150 -40 ∼ +125 2500 3.5 3.5 Units V V A W °C °C V Nm n Equivalent Circuit Note: - 1:Remendable Value; 2.5 ∼ 3.5 Nm (M5) - Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Reverse Currrent ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres t ON tr t OFF tf VF trr IRRM Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=200m A VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE=± 15V RG=9.1Ω IF=200A VGE=0V IF=200A VR=600V Min. Typ. Max. 2.0 30 7.5 2.8 Units m A µA V V p F 1.2 0.6 1.0 0.35 3.0 300 2.0 4.5 13200 2930 1330 0.6 0.2 0.6 0.2 µs V ns m A - Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal pound Min. Typ. Max. 0.16 0.35 Units °C/W Collector current vs. Collector-Emitter voltage T j=25°C 500 V GE=20V,15V,12V 400 400 Collector current vs. Collector-Emitter voltage T j=125°C 500 V GE=20V,15V,12V [A] Collector current : I Collector current : I [A] 10V 300 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 6 100 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 Collector-Emitter vs....