20N60S1
20N60S1 is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features
Low on-state resistance Low switching loss easy to use (more controllabe switching d V/dt by Rg)
Outline Drawings [mm]
TO-220
3.6± 0.2
+0.5 0
4.5±0.2 1.3±0.2
Applications
UPS Server Tele Power conditioner system Power supply
3.6 ±0.2 13.5 min.
1.2 ± 0.2
1 2.54 ± 0.2
+0.2 -0.1
2.54± 0.2
PRE-SOLDER
+0.2 0
2.7±0.2
1 23
CONNECTION
1 GATE 2 DRAIN 3 SOURCE
JEDEC : TO-220AB DIMENSIONS ARE IN
MILLIMETERS.
Maximum Ratings and Characteristics
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Symbol VDS VDSX
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source d V/dt Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS
EAS d VDS/dt d V/dt...
