2MBI100U4A-120 Datasheet | Fuji Electric

.. SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 2MBI100U4A-120 MS5F 6061 Mar. 09 ’05 Mar. 09 ’05 S.Miyashita T.Miyasaka Y.Seki K.Yamada MS5F6061 H04-004-07b R e v i s e d Date Classification Ind. Content R e c o r d s Applied date Issued date Drawn Checked Checked Approved Mar.-09 -’05 Enactment T.Miyasaka K.Yamada Y.Seki MS5F6061 2 13 H04-004-06b 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F6061 3 13 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25o C unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25o C Tc=80o C Tc=25o C Tc=80o C Conditions 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (- 1) Viso AC : 1min. voltage Screw Mounting (- 2) Terminals (- 2) Torque (- 1) All terminals should be connected together when isolation test will be done. (- 2) Remendable Value : 2.5 to 3.5 Nm (M5) Maximum Units Ratings 1200 V ±20 V 150 100 300 A 200 100 200 540 W +150 o C -40 to +125 2500 3.5 VAC Nm 4. Electrical characteristics ( at Tj= 25o C unless otherwise specified ) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Conditions VCE=1200V VGE=0V VCE=0V VGE=±20V VCE=20V Ic=100m A Ic=100A VGE=15V min. 4.5 o Characteristics typ. max. 6.5 2.05 2.25 1.90 2.10 11 0.32 0.10 0.03 0.41 0.07 1.80 1.90 1.65 1.75 1.39 1.0 200 8.5 2.20 2.05 1.20 0.60 1.00 0.30 1.95 1.80 0.35 - Units m A n A V Tj=25 C Tj=125o C Tj=25o C Tj=125o C VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=100A VGE=±15V RG=5.6Ω IF=100A VGE=0V Tj=25o C Tj=125o C Tj=25o C Tj=125o C Forward on...