2SJ475-01 Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance P-channel MOS-FET -60V 0,06Ω 25A 50W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 ±20 325,9 50 150 -55 ~ +150 Unit V A A V m J W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=-1m A VGS=0V ID=-1m A VDS=VGS VDS=-60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=-12,5A VGS=-4V ID=-12,5A VGS=-10V ID=-12,5A VDS=-25V VDS=-25V VGS=0V f=1MHz VCC=-30V ID=-25A VGS=-10V RGS=10 Ω Tch=25°C L=100µH IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. -60 -1,0 Typ. -1,5 -10 -0,2 10 0,08 0,045 15 2000 700 450 15 80 190 90 -2,0 160 0,9 Max. -2,5 -500 -1,0 100 0,11 0,06 3000 1050 680 25 120 290 140 -3,0 7,5 -25 Unit V V µA m A n A Ω Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 2,50 Unit °C/W °C/W Collmer Semiconductor, Inc. - P.O. Box...