2SK1663-S Datasheet | Fuji Electric

Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage N-channel MOS-FET 800V 4Ω 3A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC Converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 800 3 12 3 ±20 80 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Test conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS=800V Tch=25°C VGS=0V Tch=125°C VGS=±20V ID=1,5A ID=1,5A VDS=0V VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=2,1A VGS=10V RGS=50Ω IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 800 2,1 Typ. 3,0 0,01 0,2 10 3 4 900 90 35 20 40 150 60 1 400 Max. 4,0 0,5 1,0 100 4 1400 140 60 30 60 250 90 1,35 Unit V V m A m A n A Ω S p F p F p F ns ns ns ns V ns - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 125 1,56 Unit °C/W °C/W FUJI ELECTRIC Gmb H; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 800V 4Ω 2SK1663-L,S F-I Series Drain-Source-On-State Resistance vs. Tch...