2SK1817-M Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 100V 0,08Ω 20A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 100 20 80 20 ±20 40 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=100V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=20A VGS=10V RGS=25Ω IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C ID=10A Min. 100 1,0 Typ. 1,5 10 0,2 10 0,070 0,053 20 1850 400 120 5 50 350 100 1,22 70 Max. 2,5 500 1,0 100 0,120 0,080 2780 600 180 8 75 530 150 1,83 Unit V V µA m A n A Ω Ω S p F p F p F ns ns ns ns V ns fs iss oss rss d(on) r d(off) f SD rr - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 3,125 Unit °C/W °C/W FUJI ELECTRIC Gmb H; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 100V 0,08Ω F-III...