2SK2470-01MR Datasheet | Fuji Electric

Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 300V 0,2Ω 20A 125W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 300 300 20 80 30 125 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=300V Tch=25°C VDS=0V Tch=125°C VGS=±30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=20A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 300 3,5 Typ. 4,0 10 0,2 10 0,13 10 1900 400 180 20 80 100 50 1,3 300 4,0 Max. 4,5 500 1,0 100 0,2 2850 600 270 30 120 150 75 1,9 Unit V V µA m A n A Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 1,0 Unit °C/W °C/W N-channel MOS-FET 300V 0,2Ω 2SK2473-01 FAP-II Series Drain-Source...