2SK2526-01 Datasheet | Fuji Electric

Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 3,6Ω 5A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 ±30 60 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=900V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2,5A VGS=10V ID=2,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=5A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 900 2,5 Typ. 3,0 10 0,2 10 2,7 4,0 750 95 40 20 35 70 35 0,95 1100 5,5 Max. 3,5 500 1,0 100 3,6 1150 145 60 30 55 110 55 1,45 2,0 5,0 Unit V V µA m A n A Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75,0 2,08 Unit °C/W °C/W N-channel MOS-FET 900V 3,6Ω FAP-II...