2SK2647-01MR Datasheet | Fuji Electric

Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 4Ω 4A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings T( C=25°C), unless otherwise specified > Equivalent Circuit Rating 800 4 16 ±30 4 109 40 150 -55 ~ +150 Unit V A A V A m J W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg - Electrical Characteristics (TC=25°C), Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge unless otherwise specified Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS =0V ID=1m A VDS= VGS VDS=800V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=2A VGS =10V ID=2A VDS=25V VDS=25V VGS =0V f=1MHz VCC=600V ID=4A VGS=10V RGS=10 Ω Tch =25°C L = 100µH IF=2x I DR VGS =0V T ch =25°C IF=IDR V GS =0V -d I F/dt=100A/µs T ch =25°C Min. 800 3,5 Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3,0 Max. 4,5 500 1,0 100 4,0 Unit V V µA m A n A Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 3,125 Unit °C/W °C/W Collmer Semiconductor - P.O. Box...