2SK2687-01
2SK2687-01 is N-Channel Silicon Power MOSFET manufactured by Fuji Electric.
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
Applications Switching regulators DC-DC converters General purpose power amplifier
Outline Drawings
TO-220AB
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range
Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg
Rating 30
Unit V
Remarks
±50
±200
±16
520 m J
- 1
+150
°C
-55 to +150 °C
- 1 L=0.277m H, Vcc=12V
Equivalent circuit schematic
Drain(D) Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time
Turn-off time
Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Symbol V(BR)DSS VGS(th) IDSS
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr
Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=30V VGS=0V
VGS=±16V VDS=0V ID=25A VGS=10V
ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V RG=10 Ω ID=50A VGS=10V
Tch=25°C...
