2SK2753-01 Datasheet | Fuji Electric

Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 120V 32mΩ ±50A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-gate-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 120 120 ±50 ±200 ±30 150 150 -55 ~ +150 Unit V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS=120V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=50V ID=50A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 120 2,5 Typ. 3,0 10 0,2 10 24 50 4250 820 250 30 160 150 140 1,3 150 1,1 Max. 3,5 500 1,0 100 32 6400 1200 370 45 240 230 210 2,0 Unit V V µA m A n A mΩ S p F p F p F ns ns ns ns A V ns µC Symbol R th(ch-c) R th(ch-a) Test conditions channel to case channel to air Min. Typ. Max. 0,833 35 Unit °C/W °C/W N-channel MOS-FET 120V 32mΩ ±50A 150W Typical Output...