2SK2894-01R Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,004Ω ±100A 125W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 ±100 ±400 ±16 2536.7 125 150 -55 ~ +150 L=0.338m H,Vcc=12V Unit V A A V m J- W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=30V Tch=25°C Tch=125°C VGS=0V VGS=±16V VDS=0V ID=50A VGS=4V VGS=10V ID=50A ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V VGS=10V ID=100A RGS=10 Ω Tch=25°C L = 100µH IF=100A VGS=0V Tch=25°C IF=50A VGS=0V -d I/dt=100A/µs Tch=25°C Min. 30 1,0 Typ. 1,5 10 0,2 10 4,8 3,2 90 6600 3300 1400 20 150 470 370 1,0 95 0,22 Max. 2,0 500 1,0 100 7,0 4,0 9900 4950 2100 30 230 710 560 1,5 Unit V V µA m A n A mΩ mΩ S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 1,0 30,0 Unit °C/W °C/W N-channel MOS-FET 30V FAP-IIIB Series Drain-Source On-State Resistance vs....