2SK3272-01S Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) VGS E AV PD T ch T stg Rating 60 ±80 ±320 +30 / -20 613 135 150 -55 ~ +150 - L=0,13m H, VCC=24V > Equivalent Circuit Unit V A A V m J- W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) Test conditions ID=1m A VGS=0V ID=10m A VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=40A VGS=40V ID=40A VDS=10V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=80A RGS=10 Ω Tch=25°C L = 100µH IF=80A VGS=0V Tch=25°C IF=50A VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 60 2,5 Typ. 3,0 1,0 10,0 10 5,0 50 9000 1250 700 50 200 150 135 1,0 85 0,25 Max. 3,5 100,0 500,0 100 6,5 Unit V V µA µA n A mΩ S p F p F p F ns ns ns ns A V ns µC fs iss oss rss d(on) r d(off) f AV SD rr rr 80 1,5 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to ambient channel to case Min. Typ. Max. 75,0 0,926 Unit °C/W °C/W N-channel MOS-FET 60V 6,5mΩ ±80A 135W 2SK3272-01L,S Trench Gate MOSFET Drain-Source On-State...